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Properties of Dilute-Nitride-Antimonide Materials Grown by Metalorganic Vapor Phase Epitaxy (MOVPE) for Solar Cell Application

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Abstract

Bulk dilute-nitride-antimonide materials are grown by MOVPE nominally lattice-matched to the GaAs substrate with bandgap energies in the 1-1.25eV range. Single-junction solar cells demonstrate a peak efficiency of 7.22% with high open circuit voltages (Voc=0.72V).

© 2013 Optical Society of America

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