Abstract

Anomalous Hall effect (AHE) was discovered by Edwin Hall in 1880. In this talk, we report experimental observation of the quantized version of AHE, the quantum anomalous Hall effect (QAHE) in thin films of Cr-doped (Bi,Sb)₂Te₃ magnetic topological insulator grown on SrTiO₃ by molecular beam eptaxy. At zero magnetic field, the gate-tuned anomalous Hall resistance exhibits a quantized value of h/e² accompanied by a significant drop of the longitudinal resistance. The longitudinal resistance vanishes under a strong magnetic field whereas the Hall resistance remains at the fully quantized value. The realization of QAHE paves a way for developing low-power-consumption electronics and magneto-electric devices.

© 2013 Optical Society of America