Abstract

We report here correlations between high magnetic field magneto-transport properties and bands structure E(d₂), E(k_z) and E(k_p), respectively, in the direction of growth and in plane of the superlattice; performed in the envelope function formalism in HgTe (d₁=40 nm)/CdTe(d₂=15 nm) superlattice (SL). The energy E(d₂, Γ, 4.2 K), shown that when d₂ increase the gap E_g decrease to zero at the transition semiconductor to semimetal conductivity behaviour (at d₂=10 nm) and become negative accusing a semimetallic two-dimensional conduction. A reversal of the sign of the Hall coefficient occurs at about 3.2 T. It may be inferred to the existence of, at least, two types of carriers which suggests a semimetallic conduction. The Hall constant R_H(B) lead to an electron mobility μ_n=6700 and n=6.2 10¹¹ cm⁻² (with μ_n/μ_p=15 and p/n=42). The formalism used here predicts that this sample is a narrow gap semimetallic, two-dimensional and far-infrared detector

© 2013 Optical Society of America