The analysis of interface states in PIN photodetector using cross-finger structure

H. Y. Zhou; X. X. Luan; X. Guo

doi:10.1364/ACPC.2013.AF2B.42

Asia Communications and Photonics Conference 2013
OSA Technical Digest (online) (Optica Publishing Group, 2013),
paper AF2B.42
•https://doi.org/10.1364/ACPC.2013.AF2B.42

The analysis of interface states in PIN photodetector using cross-finger structure

H. Y. Zhou, X. X. Luan, and X. Guo

Asia Communications and Photonics Conference 2013

Beijing China
12–15 November 2013
ISBN: 978-1-55752-989-3

From the session
ACP/IPOC Subcommittee 1 Poster Session (AF2B)

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H. Y. Zhou, X. X. Luan, and X. Guo, "The analysis of interface states in PIN photodetector using cross-finger structure," in Asia Communications and Photonics Conference 2013, OSA Technical Digest (online) (Optica Publishing Group, 2013), paper AF2B.42.

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Abstract

Built the equivalent circuit by the rule of carriers changed with bias in PIN photodetector using cross-finger structure, tested the C-V/C-f curve, and analysis every part of capacitance, then get the accurate interface states parameters.

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