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Conferences > ACPC > 2013 > AF2B > AF2B.29

The LP-MOCVD growth of BGaAs alloys with different gallium precursors

Zhigang Jia, Qi Wang, Xiaomin Ren, Yifan Wang, Yingce Yan, Shiwei Cai, Xia Zhang, and Yongqing Huang

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Abstract

BGaAs alloys have been grown on GaAs substrate with different Ga precursor, TMGa and TEGa. With TEGa, it can grow at a lower temperature, and obtain a higher boron content than that grown with TMGa.

© 2013 Optical Society of America

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