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Conferences > ACPC > 2012 > AF4B > AF4B.35

Influence of annealing temperature on properties of RF sputtered InxSy buffer layers in Cu(In,Ga)Se2 solar cells

Demiao Wang, Jingping Lu, and Yuandong Li

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Abstract

Sputtered InxSy layers were deposited on glass at post-annealing temperature ranging from 623 to 723K. Investigation of the properties indicated decreased optical band-gap and changes in microstructure with increasing annealing temperature.

© 2012 Optical Society of America

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