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“S-shaped” Photoluminescence Emission Shift in Cu(In, Ga)Se2 Thin Films

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Abstract

We have utilized photoluminescence (PL) measurement to investigate carrier recombination mechanism in Cu(In,Ga)Se2 thin films and observed an S-shaped emission shift revealed from the corresponding PL peak of near band edge transition.

© 2012 Optical Society of America

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