Influence of Electrical Conditions on Silicon Pulse Shaping and Modelocking

Shiming Gao; Lizhong Cao; Bing Sun; Sichang Jiang; Kai Hu; Yizhen Wei; Yizhen Wei

doi:10.1364/ACPC.2012.AF4A.70

Asia Communications and Photonics Conference
OSA Technical Digest (online) (Optica Publishing Group, 2012),
paper AF4A.70
•https://doi.org/10.1364/ACPC.2012.AF4A.70

Influence of Electrical Conditions on Silicon Pulse Shaping and Modelocking

Shiming Gao, Lizhong Cao, Bing Sun, Sichang Jiang, Kai Hu, and Yizhen Wei

Asia Communications and Photonics Conference 2012

Guangzhou China
7–10 November 2012
ISBN: 978-1-55752-957-2

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Poster Session I (AF4A)

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S. Gao, L. Cao, B. Sun, S. Jiang, K. Hu, and Y. Wei, "Influence of Electrical Conditions on Silicon Pulse Shaping and Modelocking," in Asia Communications and Photonics Conference, OSA Technical Digest (online) (Optica Publishing Group, 2012), paper AF4A.70.

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Abstract

The silicon pulse shaping and modelocking laser is characterized by varying the input electrical conditions. A narrower output pulse can be obtained by increasing modulation depth, reducing duty cycle, and increasing driving current of amplifier.

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