Novel silicon-on-insulator grating couplers based on CMOS polysilicon gate layer

Chao Qiu; Chao Qiu; Chao Qiu; Zhen Sheng; Le Li; Albert Pang; Aiming Wu; Junjie Du; Jing Chen; Xi Wang; Fuwan Gan; Shichang Zou; Shichang Zou

doi:10.1364/ACP.2011.83081G

Optoelectronic Materials and Devices
Proceedings of SPIE (Optica Publishing Group, 2011),
paper 83081G
•https://doi.org/10.1364/ACP.2011.83081G

Novel silicon-on-insulator grating couplers based on CMOS polysilicon gate layer

Chao Qiu, Zhen Sheng, Le Li, Albert Pang, Aiming Wu, Junjie Du, Jing Chen, Xi Wang, Fuwan Gan, and Shichang Zou

Asia Communications and Photonics Conference and Exhibition 2011

Shanghai China
13–16 November 2011
ISBN: 978-0-8194-8956-2

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Passive Integrated Devices (PID)

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C. Qiu, Z. Sheng, L. Li, A. Pang, A. Wu, J. Du, J. Chen, X. Wang, F. Gan, and S. Zou, "Novel silicon-on-insulator grating couplers based on CMOS polysilicon gate layer," in Optoelectronic Materials and Devices, G. Duan, ed., Vol. 8308 of Proceedings of SPIE (Optica Publishing Group, 2011), paper 83081G.

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Abstract

Grating couplers are widely investigated as a coupling interface between silicon-on-insulator waveguides and optical fibers. In this work, novel grating couplers based on strip poly-Si are proposed. This structure utilizes the poly-Si gate layer of the CMOS MOSFETs, and thus enables grating couplers integrated with CMOS circuits without adding any additional masks and process steps. Simulation results show that a coupling efficiency over 60% can be achieved between silicon-on-insulator waveguides and fibers.

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