Abstract

In present work the effect of two different source of silicon Tetraethylorthosilicate and Octamethylcyclotetrasiloxane on TiO₂-doped SiO₂ films have been studied. The study reveals that film properties depend on the precursors used for deposition. The deposited films are crystalline with broad peak between 2θ = 20° – 30° corresponding to SiO₂ and two strong peak appearing at 2θ = 38.3° and 2θ = 44.6° due to the (004) anatase phase and (210) rutile phase of TiO₂. It is also clear from the SEM study that the particle size of films deposited using TEOS are smaller than the one deposited by OMCTS.

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