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Conferences > ACP > 2009 > WL > WL51

The electrical properties of the diamond optoelectronic device

Yi Zhang, Lin-jun Wang, Jian Huang, Ke Tang, Fengjuan Zhang, Qian Fang, Qingkai Zeng, Run Xu, Jijun Zhang, Jiahua Min, and Yiben Xia

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Abstract

200 µm thick free-standing polycrystalline diamond films were grown by microwave plasma chemical vapor deposition (MPCVD) method. The nucleation surfaces of diamond were characterized by XRD, Raman scattering, atomic force microscopy (AFM) method. An ultraviolet (UV) optoelectronic device was fabricated on diamond nucleation surface, showing clear modulation of channel current.

© 2009 OSA, IEEE Photonics Society, SPIE, COS, CIC

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