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Conferences > ACP > 2009 > WL > WL33

Growth of GaAs Nanowires with Various Thickness of Au Film

Xian Ye, Hui Huang, Xiaomin Ren, Yisu Yang, ShiWei Cai, Yongqing Huang, and Qi Wang

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Abstract

GaAs nanowires were grown on GaAs(111)B substrates via VLS mechanism with various Au film thickness. Experiment results indicated that thicker Au film results in larger diameters, more dispersed size distribution, and lower density of the nanowires. The growth rate is independent on diameters, while it decreases with the density.

© 2009 OSA, IEEE Photonics Society, SPIE, COS, CIC

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