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Conferences > ACP > 2009 > ThW > ThW5

High Data Rate 850 nm Oxide VCSEL for 20 Gb/s Application and Beyond

Chen Ji, Jingyi Wang, David Söderström, and Laura Giovane

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Abstract

In this paper we report 850nm oxide VCSEL operating at up to 25 Gb/s (PRBS31) with 5dB ER, based on a high volume manufacturing platform with MOCVD grown GaAs/AlGaAs epi-material. We will also discuss VCSEL characterization results relevant for optical transceiver applications beyond 10Gb/s.

© 2009 OSA, IEEE Photonics Society, SPIE, COS, CIC

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