Photoluminescence with Ultra-wide Spectrum from Radiative Defects in Si-rich SiNx

Weiwei Ke; Xue Feng; Xuan Tang; Yoshinori Tanaka; Dai Ohnishi; Yidong Huang

doi:10.1364/ACP.2009.ThB4

Asia Communications and Photonics Conference and Exhibition
Technical Digest (CD) (Optica Publishing Group, 2009),
paper ThB4
•https://doi.org/10.1364/ACP.2009.ThB4

Photoluminescence with Ultra-wide Spectrum from Radiative Defects in Si-rich SiN_x

Weiwei Ke, Xue Feng, Xuan Tang, Yoshinori Tanaka, Dai Ohnishi, and Yidong Huang

Asia Communications and Photonics Conference and Exhibition 2009

Shanghai China
2–6 November 2009
ISBN: 978-1-55752-877-3

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Silicon Photonics (ThB)

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W. Ke, X. Feng, X. Tang, Y. Tanaka, D. Ohnishi, and Y. Huang, "Photoluminescence with Ultra-wide Spectrum from Radiative Defects in Si-rich SiNx," in Asia Communications and Photonics Conference and Exhibition, Technical Digest (CD) (Optica Publishing Group, 2009), paper ThB4.

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Abstract

The photoluminescence from the radiative recombination defects in Si-rich SiN_x with various Si concentrations was investigated. Due to the Si and N dangling bonds, ultra-wide spectra with full width at half maximum of ~250nm were achieved in visible region.

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