Demonstration of True Green ITO Clad Semipolar ( 20 2 ¯ 1 ) InGaN/GaN Laser Diodes

Matthew T. Hardy; Matthew T. Hardy; Casey O. Holder; Casey O. Holder; Shuji Nakamura; Shuji Nakamura; James S. Speck; James S. Speck; Daniel A. Cohen; Daniel A. Cohen; Steven P. DenBaars; Steven P. DenBaars

doi:10.1364/CLEO_SI.2013.CF1F.1

CLEO: 2013
OSA Technical Digest (online) (Optica Publishing Group, 2013),
paper CF1F.1
•https://doi.org/10.1364/CLEO_SI.2013.CF1F.1

Demonstration of True Green ITO Clad Semipolar $(20 \bar{2} 1)$ InGaN/GaN Laser Diodes

Matthew T. Hardy, Casey O. Holder, Shuji Nakamura, James S. Speck, Daniel A. Cohen, and Steven P. DenBaars

CLEO: Science and Innovations 2013

San Jose, California United States
9–14 June 2013
ISBN: 978-1-55752-972-5

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High Power and Nitride Semiconductor Lasers (CF1F)

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M. T. Hardy, C. O. Holder, S. Nakamura, J. S. Speck, D. A. Cohen, and S. P. DenBaars, "Demonstration of True Green ITO Clad Semipolar ( 20 2 ¯ 1 ) InGaN/GaN Laser Diodes," in CLEO: 2013, OSA Technical Digest (online) (Optica Publishing Group, 2013), paper CF1F.1.

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Abstract

Non-epitaxial cladding layers have advantages for green laser diodes in terms of reduced p-cladding resistance and reduced active region thermal damage. We demonstrate true green semipolar InGaN/GaN laser diodes with ITO cladding grown on semipolar GaN substrates.

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