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Photon-gated hole burning: a new mechanism using two-step photoionization

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Abstract

We have observed photon-gated spectral hole burning, i.e., hole burning that occurs only in the presence of an additional gating-light source. Gating enhancement factors of 104 were observed. In BaClF:Sm2+ this involves two-step photoionization of Sm2+ and leads to persistent holes in the 4F05D0 (687.9-nm) and 7F05D1 (629.7-nm) absorption lines. The hole widths of 25 MHz at 2 K are much narrower than the inhomogeneous broadening of 16 GHz. The action spectrum of the gating shows a threshold behavior around 2.5 eV. Erasing studies show that Sm3+ acts as a trap for the released electrons. A remarkable and novel feature is that the holes can be recovered after temperature cycling to 300 K.

© 1985 Optical Society of America

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